Spin-on anti-reflective coatings for photolithography

ABSTRACT

Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

FIELD OF THE INVENTION

The present invention relates generally to spin-on glass materials andmore specifically to light-absorbing spin-on glass materials for use asanti-reflective layers in photolithography and methods of producing thematerials.

BACKGROUND OF THE INVENTION

To meet the requirements for faster performance, the characteristicdimensions of features of integrated circuit devices have continued tobe decreased. Manufacturing of devices with smaller feature sizesintroduces new challenges in many of the processes conventionally usedin semiconductor fabrication. One of the most important of thesefabrication processes is photolithography.

It has long been recognized that linewidth variations in patternsproduced by photolithography can result from optical interference fromlight reflecting off an underlying layer on a semiconductor wafer.Variations in photoresist thickness due to the topography of theunderlying layer also induce linewidth variations. Anti-reflectivecoatings (ARC) applied under a photoresist layer have been used toprevent interference from reflection of the irradiating beam. Inaddition, anti-reflective coatings partially planarize the wafertopography, helping to improve linewidth variation over steps becausethe photoresist thickness is more uniform.

Organic polymer films, particularly those that absorb at the i-line (365nm) and g-line (436 nm) wavelengths conventionally used to exposephotoresists, and at the recently used 157 nm, 193 nm, 248 nmwavelengths, have been employed or are being tested as anti-reflectivecoatings. However, the fact that the organic ARC's share many chemicalproperties with the organic photoresists can limit usable processsequences. Furthermore, ARC's, including both organic and inorganicARC's, may intermix with photoresist layers. Organic and inorganic ARC'scan mix with photoresist layers if they are not sufficiently baked orcured.

One solution to avoid intermixing is to introduce thermosetting bindersas additional components of organic ARC's, as described for example inU.S. Pat. No. 5,693,691 to Flaim et al. Dyes may also be incorporated inorganic ARC's, as well as, optionally, additional additives such aswetting agents, adhesions promoters, preservatives, and plasticizers, asdescribed in U.S. Pat. No. 4,910,122 to Arnold et al. Even though theseprevious patents may address some of the issues with intermixing, theproblem of the lack of 86- to 90-degree uniformity on the resist edgesbecause of the coupled ARC layer has not been addressed in the priorart.

Photoresists and anti-reflective coatings can also influence one anotherto the extent that the chemical properties of the anti-reflectivecoating and/or the resist material can lead the resist to “fall over”once a pattern has been developed into the resist. In other words, thepatterned resist sidewall can't maintain an approximate 90-degree anglewith respect to the anti-reflective coating after photoresistdeveloping. Instead the resist will take on a 120 degree or an 80-degreeangle with respect to the anti-reflective coating. These imperfectionsare also an indication that photoresist materials and anti-reflectivecoatings are not necessarily chemically, physically or mechanicallycompatible.

Another class of materials that can be used as an anti-reflective layeris spin-on-glass (SOG) compositions containing a dye. Yau et al., U.S.Pat. No. 4,587,138, disclose a dye such as basic yellow #11 mixed with aspin-on-glass in an amount approximately 1% by weight. Allman et al.U.S. Pat. No. 5,100,503 disclose a cross-linked polyorganosiloxanecontaining an inorganic dye such as TiO₂, Cr₂O₇, MoO₄, MnO₄, or ScO₄,and an adhesion promoter. Allman additionally teaches that thespin-on-glass compositions also serve as a planarizing layer. However,the spin-on-glass, dye combinations that have been disclosed to date arenot optimal for exposure to the deep ultraviolet, particularly 248 and193 nm, light sources that are coming into use to produce devices withsmall feature sizes. Furthermore, not all dyes can be readilyincorporated into an arbitrary spin-on-glass composition. Also, eventhough these ARC's are chemically different than the previouslymentioned organic ARC's, the coupled resist layers can still suffer from“falling over” after being developed, as based on the chemical,physical, and mechanical incompatibility of the ARC layer and the resistlayer—which is a common problem when trying to couple resist materialsand anti-reflective coatings.

Therefore, an absorbing spin-on-glass anti-reflective coating andlithography material that a) absorbs strongly and uniformly in theultraviolet spectral region, b) can keep the resist material from“falling over” and expanding outside of the intended resist line, and c)would be impervious to photoresist developers and methods of productionof the SOG anti-reflective coating described would be desirable toadvance the production of layered materials, electronic components andsemiconductor components.

SUMMARY OF THE INVENTION

An anti-reflective coating material for ultraviolet photolithographycomprises at least one organic absorbing compound and at least one pHtuning agent that are incorporated into a spin-on-inorganic or spin-onglass (SOG) material.

The spin-on materials comprise inorganic-based compounds, such as thosethat are silicon-based, gallium-based, arsenic-based, boron-based or acombination of those inorganic elements and materials. Some contemplatedspin-on glass materials may comprise methylsiloxane,methylsilsesquioxane, phenylsiloxane, phenylsilsesquioxane,methylphenylsiloxane, methylphenylsilsesquioxane, silicate polymers andmixtures thereof. As used herein, the group known as “spin-on-glassmaterials” also comprises siloxane polymers, hydrogensiloxane polymersof the general formula (H_(0-1.0), SiO_(1.5-2.0)), andhydrogensilsesquioxane polymers, which have the formula(HSiO_(1.5))_(x), where x is greater than about four. Also included arecopolymers of hydrogensilsesquioxane and alkoxyhydridosiloxane orhydroxyhydridosiloxane. Spin-on-glass materials additionally includeorganohydridosiloxane polymers of the general formula (H_(0-1.0),SiO_(1.5-2.0))_(n)(R_(o-1.o)SiO_(1.5-2.0m), andorganohydridosilsesquioxane polymers of the general formula(HSiO_(1.5))_(n)(RSiO_(1.5))_(m), where m is greater than zero and thesum of n and m is greater than about four and R is alkyl or aryl.

Absorbing compounds suitable for incorporation into the spin-on-glassmaterials are strongly absorbing at wavelengths less than 375 nm or lessthan about 260 nm. In particular, suitable absorbing compounds arearound wavelengths such as 248 nm, 193 nm, 157 nm or other ultravioletwavelengths, such as 365 nm, that may be used in photolithography. Thechromophores of suitable compounds typically have at least one benzenering, and in those instances where there are two or more benzene rings,those rings may or may not be fused. Incorporatable absorbing compoundshave an accessible reactive group attached to the chromophore, whereinthe reactive groups can include hydroxyl groups, amine groups,carboxylic acid groups, and substituted silyl groups with silicon bondedto one, two, or three alkoxy group or halogen atom substituents. Thereactive groups may be directly bonded to the chromophore or thereactive groups may be attached to the chromophore through a hydrocarbonbridge or an oxygen linkage. The chromophores may also comprisesilicon-based compounds or polymers similar to those used to formulatethe spin-on glass materials.

The pH tuning agent is a compound, material or solution that is added tothe mixture of the spin-on material and the organic absorbing compoundin part to “tune” or adjust the pH of the final spin-on composition suchthat the final spin-on composition is more compatible with the coupledresist layer or other coupled layers. It should be appreciated, however,that the pH tuning agent not only adjusts the pH of the final spin-oncomposition, but it also influences the chemical performance andcharacteristics, mechanical performance and structural makeup of thefinal spin-on composition that is part of the layered material,electronic component or semiconductor component, such that the finalspin-on composition is more compatible with the resist material that iscoupled to it. More specifically, the pH tuning agent strong influencesthe polymeric characteristics, the structural makeup and the spatialorientation that results in increasing the surface properties of theanti-reflective coating for optimal resist performance. In other words,a pH tuning agent that merely adjusts the pH of the spin-on materialwithout influencing the mechanical properties and structural makeup ofthe spin-on composition or the coupled resist material is notcontemplated herein.

According to another aspect of the present invention, methods forsynthesizing absorbing spin-on compositions are provided. Spin-onmaterials are conventionally synthesized from silane and silicon-basedreactants such as triethoxysilane, tetraethoxysilane,methyltriethoxysilane, dimethyldiethoxysilane, tetramethoxysilane,methyltrimethoxysilane, trimethoxysilane, dimethyldimethoxysilane,phenyltriethoxysilane, phenyltrimethoxysilane, diphenyldiethoxysilane,and diphenyldimethoxysilane. However, gallium, arsenic, germanium, boronand similar atoms and materials may also be used in conjunction withsilicon atoms or as the sole atomic material to produce a spin-onmaterial. Halosilanes, particularly chlorosilanes are also used assilane reactants.

A method of making an absorbing spin-on composition includes combiningat least one inorganic-based composition, at least one incorporatableorganic absorbing compound, at least one pH tuning agent, an acid/watermixture, such as a nitric acid/water mixture, and at least one solventto form a reaction mixture; and refluxing the reaction mixture to formthe absorbing spin-on composition. The spin-on composition formed isthen diluted with at least one solvent to provide coating solutions thatproduce films of various thicknesses. The pH tuning agent may also andalternatively be added during the refluxing step or after the refluxingstep.

In another method of making an absorbing spin-on composition, at leastone inorganic-based composition, at least one incorporatable organicabsorbing compound, at least one pH tuning agent, and at least onesolvent can be combined to form a reaction mixture. The reaction mixtureis then refluxed to form the absorbing spin-on composition. The spin-oncomposition formed is diluted with at least one solvent to providecoating solutions that produce films of various thicknesses. The pHtuning agent in this method may either be a variation of theconventional acid/water mixture, in that a different acid may be added,less acid may be added, or more water may be added. Regardless of the pHtuning agent chosen, however, the basic principal still remains—which isthat not only the pH is influenced by the pH tuning agent, but thechemical, mechanical and physical properties of the ARC are alsoinfluenced resulting in a more compatible resist/ARC couple.

In yet another aspect of the present invention, an absorbing spin-oncomposition is produced comprising at least one silicon-based compound,at least one incorporatable organic absorbing compound that absorbslight at wavelengths less than about 375 nm, and a pH tuning agent.Further provided are absorbing spin-on compositions, wherein at leastone of the silicon-based compounds or the incorporatable organicabsorbing compound comprises at least one alkyl group, alkoxy group,ketone group or azo group.

According to yet another aspect of the invention, spin-on compositionscomprising the absorbing compounds of the chemical class comprising9-anthracene carboxy-alkyl trialkoxysilane are provided. A method ofsynthesizing any one of the 9-anthracene carboxy-alkyl trialkoxysilanesincludes combining 9-anthracene carboxylic acid,chloroalkyltrialkoxysilane, triethylamine, and a solvent to fowl areaction mixture; refluxing the reaction mixture; cooling the refluxedreaction mixture to form a precipitate and a 5 remaining solution; andfiltering the remaining solution to produce liquid 9-anthracenecarboxy-alkyl trialkoxysilane.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 a-1 f show the chemical formulas of absorbing compoundsincorporated into to spin-on-glass compositions.

FIGS. 2 a-2 h illustrate the use of absorbing spin-on compositionscomprising pH tuning agents as anti-reflective coating layers in aphotolithography process.

DETAILED DESCRIPTION

An anti-reflective coating material for ultraviolet photolithographyincludes at least one organic absorbing compound and at least one pHtuning agent incorporated into a spin-on inorganic or spin-on-glass(SOG) material. The absorbing spin-on compositions are dissolved inappropriate solvents to form coating solutions and applied to variouslayers of materials in fabricating layered materials, electronicdevices, and semiconductor devices. The absorbing spin-onanti-reflective coatings are designed to be readily integrated intoexisting layered material, electronic component or semiconductorfabrication processes. Some properties that facilitate integrationinclude a) developer resistance, b) thermal stability during standardphotoresist processing, and c) selective removal with respect tounderlying layers.

Spin-On Material

Contemplated spin-on materials comprise inorganic-based compounds, suchas silicon-based, gallium-based, germanium-based, arsenic-based,boron-based compounds or combinations thereof. As used herein, thephrases “spin-on material”, “spin-on organic material”, “spin-oncomposition” and “spin-on inorganic composition” may be usedinterchangeable and refer to those solutions and compositions that canbe spun-on to a substrate or surface. It is further contemplated thatthe phrase “spin-on-glass materials” refers to a subset of “spin-oninorganic materials”, in that spin-on glass materials refer to thosespin on materials that comprise silicon-based compounds and/or polymersin whole or in part. Examples of silicon-based compounds comprisesiloxane compounds, such as methylsiloxane, methylsilsesquioxane,phenylsiloxane, phenylsilsesquioxane, methylphenylsiloxane,methylphenylsilsesquioxane, silazane polymers, silicate polymers andmixtures thereof. A contemplated silazane polymer is perhydrosilazane,which has a “transparent” polymer backbone where chromophores can beattached.

As used herein, the phrase “spin-on-glass materials” also includessiloxane polymers and blockpolymers, hydrogensiloxane polymers of thegeneral formula (H_(0-1.0), SiO_(1.5-2.0))_(x) andhydrogensilsesquioxane polymers, which have the formula(HSiO_(1.5))_(x), where x is greater than about four. Also included arecopolymers of hydrogensilsesquioxane and an alkoxyhydridosiloxane orhydroxyhydridosiloxane. Spin-on glass materials additionally includeorganohydridosiloxane polymers of the general formula (H_(0-1.0),SiO_(1.5-20))_(n)(R_(o-1.o)SiO_(1.5-2.0))_(m), andorganohydridosilsesquioxane polymers of the general formula(HSiO_(1.5))_(n)(RSiO_(1.5))_(m), where in is greater than zero and thesum of n and m is greater than about four and R is alkyl or aryl. Someuseful organohydridosiloxane polymers have the sum of n and in fromabout four to about 5000 where R is a C₁-C₂₀ alkyl group or a C₆-C₁₂aryl group. The organohydridosiloxane and organohydridosilsesquioxanepolymers are alternatively denoted spin-on-polymers. Some specificexamples include alkylhydridosiloxanes, such as methylhydridosiloxanes,ethylhydridosiloxanes, propylhydridosiloxanes, t-butylhydridosiloxanes,phenylhydridosiloxanes; and alkylhydridosilsesquioxanes, such asmethylhydridosilsesquioxanes, ethylhydridosilsesquioxanes,propylhydridosilsesquioxanes, t-butylhydridosilsequioxanes,phenylhydridosilsesquioxanes, and combinations thereof.

Absorbing Compound

Many naphthalene-, phenanthrene- and anthracene-based compounds havesignificant absorption at 248 nm and below. Benzene-based, equivalentlytermed here phenyl-based, compounds have significant absorption atwavelengths shorter than 200 nm. While these naphthalene-, anthracene-,phenanthrene- and phenyl-based compounds are frequently referred to asdyes, the term absorbing compound is used here because the absorptionsof these compounds are not limited to wavelengths in the visible regionof the spectrum. However, not all such absorbing compounds can beincorporated into spin-on materials for use as anti-reflective coatingmaterials. Absorbing compounds suitable for use with the presentinvention have a definable absorption peak centered around wavelengthssuch as 248 nm, 193 run, 157 nm or other ultraviolet wavelengths, suchas 365 nm, that may be used in photolithography. It is contemplated thata preferred “definable absorption peak” is one that is at least 1 nm inwidth, wherein width is calculated by those methods commonly known inthe art of photolithography. In more preferred embodiments, thedefinable absorption peak is at least 5 nm in width. In even morepreferred embodiments, the definable absorption peak is at least 10 nmin width.

The chromophores of suitable absorbing compounds typically have at leastone benzene ring, and where there are two or more benzene rings, therings may or may not be fused. Incorporatable absorbing compounds havean accessible reactive group attached to the chromophore, wherein thereactive groups include hydroxyl groups, amine groups, carboxylic acidgroups, and substituted silyl groups with silicon bonded to one, two, orthree “leaving groups,” such as alkoxy groups or halogen atoms. Ethoxyor methoxy groups or chlorine atoms are frequently used as leavinggroups. Preferable reactive groups comprise siliconalkoxy,silicondialkoxy and silicontrialkoxy groups, such as siliconethoxy,silicondiethoxy, silicontriethoxy, siliconmethoxy, silicondimethoxy, andsilicontrimethoxy groups and halosilyl groups, such as chlorosilyl,dichlorosilyl, and trichlorosilyl groups.

The reactive groups may be directly bonded to the chromophore, as, forexample, in phenyltriethoxysilane, or the reactive groups may beattached to the chromophore through an oxygen linkage or a hydrocarbonbridge, as, for example, in 9-anthracene carboxy-alkyl trialkoxysilane.The inclusion of silicontrialkoxy groups on chromophores has been foundto be advantageous, especially for promoting stability of the absorbingSOG films. Other useful absorbing compounds are those compounds thatcontain an azo group, —N═N—, and an accessible reactive group,particularly those containing an azo group linking benzene rings,especially when absorption around 365 nm is desired for the particularapplication. Azo groups may be included as part of a straight-chainmolecule, a cyclic molecule or a hybrid straight-chain/cyclic molecule.

The absorbing compounds may be incorporated interstitially in thespin-on material matrix. The absorbing compounds may also be chemicallybonded to the spin-on material or polymer. In some contemplatedembodiments, the incorporatable absorbing compounds form bonds with thespin-on material backbone or polymer backbone via the accessiblereactive groups.

Absorbing spin-on compositions and materials may also comprise asilicon-based compound and an incorporatable organic absorbing compoundthat absorbs light at wavelengths less than about 375 nm. Further, it iscontemplated that in other embodiments at least one of the silicon-basedcompound or the incorporatable organic absorbing compound comprises atleast one alkyl group, alkoxy group, ketone group or azo group.

Examples of absorbing compounds suitable for use with the presentinvention include anthraflavic acid (1), 9-anthracene carboxylic acid(2), 9-anthracene methanol (3), 9-anthracene ethanol (4), 9-anthracenepropanol (5), 9-anthracene butanol (6), alizarin (7), quinizarin (8),primuline (9), 2-hydroxy-4-(3-triethoxysilylpropoxy)-diphenylketone(10), 2-hydroxy-4-(3-trimethoxysilylpropoxy)-diphenylketone (11),2-hydroxy-4-(3-tributoxysilylpropoxy)-diphenylketone (12),2-hydroxy-4-(3-tripropoxysilylpropoxy)-diphenylketone (13), rosolic acid(14), triethoxysilylpropyl-1,8-naphthalimide (15),trimethoxysilylpropyl-1,8-naphthalimide (16),tripropoxysilylpropyl-1,8-naphthalimide (17), 9-anthracenecarboxy-methyl triethoxysilane (18), 9-anthracene carboxy ethyltriethoxysilane (19), 9-anthracene carboxy-butyl triethoxysilane (20),9-anthracene carboxy-propyl triethoxysilane (21), 9-anthracenecarboxy-methyl trimethoxysilane (22), 9-anthracene carboxy-ethyltributoxysilane (23), 9-anthracene carboxy-methyl tripropoxysilane (24),9-anthracene carboxy-propyl trimethoxysilane (25), phenyltriethoxysilane(26), phenyltrimethoxysilane (27), phenyltripropoxysilane (28),10-phenanthrene carboxy-methyl triethoxysilane (29), 10-phenanthrenecarboxy-ethyl triethoxysilane (30), 10-phenanthrene carboxy-methyltrimethoxysilane (31), 10-phenanthrene carboxy-propyl triethoxysilane(32), 4-phenylazophenol, (33), 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane (34), 4-methoxyphenylazobenzene-4-carboxy-ethyltriethoxysilane (35), 4-ethoxyphenylazobenzene-4-carboxy-propyltriethoxysilane (36), 4-butoxyphenylazobenzene-4-carboxy-propyltriethoxysilane (37), 4-methoxyphenylazobenzene-4-carboxy-methyltriethoxysilane (38), 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane (39), 4-methoxyphenylazobenzene-4-carboxy-ethyltriethoxysilane (40), 4-methoxyphenylazobenzene-4-carboxy-propyltriethoxysilane (41), and combinations, thereof. Chemical formulas ofabsorbing compounds 1-41 are illustrated in FIGS. 1 a-1 f.

Advantageous results have been obtained, for example, with 9-anthracenecarboxy-methyl triethoxysilane (18) with combinations of 9-anthracenemethanol (3), 2-hydroxy-4-(3-triethoxysilylpropoxy)-diphenylketone (10),and rosolic acid (14), and with phenyltriethoxysilane (26). It should beappreciated, however, that this list of specific compounds is not anexhaustive list, and that contemplated and preferred compounds can beselected from the chemical compound classes that comprise these specificcompounds.

Absorbing compounds 1-25 and 29-41 are available commercially, forexample, from Aldrich Chemical Company (Milwaukee, Wis.). 9-anthracenecarboxy-alkyl trialkoxysilanes are synthesized using esterificationmethods, as described below in the Examples Section.

Absorbing compound 26-28 is available commercially from Gelest, Inc.(Tullytown, Pa.). Examples of phenyl-based absorbing compounds inaddition to absorbing compound (26-28), many of which are alsocommercially available from Gelest, Inc., include structures withsilicon-based reactive groups attached to phenyl rings or to substitutedphenyls, such as methylphenyl, chlorophenyl, and chloromethylphenyl.Specific phenyl-based absorbing compounds includephenyltrimethoxysilane, benzyltrichlorosilane,chloromethylphenyltrimethoxysilane, phenyltrifluorosilane, to name onlya few examples.

Diphenyl silanes including one or two “leaving groups,” such asdiphenylmethylethoxysilane, diphenyldiethoxysilane, anddiphenyldichlorosilane, to again name only a few examples, are alsosuitable incorporatable absorbing compounds. Alkoxybenzoic acids mayalso be used as absorbing compounds, including methoxybenzoic acid.

A general method of synthesizing 9-anthraeene carboxy-alkyltrialkoxysilane compounds comprises using 9-anthracene carboxylic acidand a chloromethyl trialkoxysilane compound as reactants. Specifically,a method of synthesizing 9-anthracene carboxy-methyl triethoxysilane(18) uses 9-anthracene carboxylic acid (2) and chloromethyltriethoxysilane as reactants. The reactants are combined withtriethylamine and methylisobutylketone (MIBK), previously dried over 4 Åmolecular sieves, to form a reaction mixture which is heated to refluxand refluxed for from approximately 6 to 10 hours. After reflux, thereaction mixture is cooled overnight leading to a large quantity ofsolid precipitate. The remaining solution is roto-evaporated, filteredthrough a silica gel column, and roto-evaporated a second time, toproduce 9-anthracene carboxy-methyl triethoxysilane (18) as a dark amberoily liquid, which may be purified. This method is significant becauseit is suitable to use to produce any compound in the class of9-anthracene carboxy-alkyl trialkoxysilanes, including 9-anthracenecarboxy-ethyl triethoxysilane, 9-anthracene carboxy-propyltrimethoxysilane, and 9-anthracene carboxy-propyl triethoxysilane.

pH Tuning Agent

The pH tuning agent is a compound, material or solution that is added tothe mixture of the spin-on material and the organic absorbing compoundin order to “tune” or adjust the pH of the final spin-on composition sothat it is compatible or more compatible with any chosen resistmaterial, including those with absorption peaks around 365 nm, 248 nm,193 nm and 157 nm.

It should be appreciated, however, that the pH tuning agent not onlyadjusts the pH of the final spin-on composition, but it also influencesthe chemical performance and characteristics, mechanical performance andstructural makeup of the final spin-on composition that is part of thelayered material, electronic component or semiconductor component, suchthat the final spin-on composition is more compatible with the resistmaterial that is coupled to it. More specifically, the pH tuning agentstrongly influences the polymeric characteristics, the structural makeupand the spatial orientation that results in increasing the surfaceproperties of the anti-reflective coating for optimal resistperformance. In other words, a pH tuning agent that merely adjusts thepH of the spin-on material without influencing the mechanical propertiesand structural makeup of the spin-on composition or the coupled resistmaterial is not contemplated herein.

Contemplated pH tuning agents must perform two separate and sometimesrelated functions: a) to influence the pH of the composition to which itis being added; and b) to influence the mechanical performance and/orstructural makeup of the spin-on composition, which can also been statedas strongly influencing the polymeric characteristics, the structuralmakeup and the spatial orientation that results in increasing thesurface properties of the anti-reflective coating for optimal resistperformance.

Contemplated pH tuning agents are partly designed to influence the pH ofthe composition to which it is added. The class of potential pH tuningagents comprises a) any suitable acidic or basic solution, compound,and/or component and/or b) any suitable strength or concentration of anacidic or basic solution, compound and/or component. This compilation ofsuitable pH “influencers” is the larger set of compound from which theultimate pH tuning agent is chosen, because the pH “influencer” mustalso be able to influence the mechanical performance and/or structuralmakeup of the final spin-on composition while also making the finalspin-on composition compatible or more compatible.

By this, for example, it is meant that the chosen pH tuning agent isalso designed to match the solubility parameter, the molecular weight,the melting point or some other physical characteristic of the spin-onmaterial and organic absorbing compound mixture. In other words, the pHtuning agent and the mixture of spin-on material and organic absorbingcompound cannot be physically incompatible, depending on the desirablephysical characteristic, even if the pH tuning agent performs its firstfunction of influencing the pH of the mixture. In preferred embodiments,the desirable physical characteristic is the solubility parameter or themolecular weight. In more preferred embodiments, the desirable physicalcharacteristic is the solubility parameter.

It is also contemplated that the pH tuning agent will also mechanicallyand structurally influence the performance and characteristics of theresist material/ARC couple. For example, a pH tuned spin-on compositionis applied to a substrate or layered material, and then a resistmaterial is applied to the spin-on composition. When the resist materialis exposed and subsequently developed will have an 85-90 degree anglewith respect to the spin-on composition (a development line). In otherwords, the resist material will not “fall over” onto the spin-oncomposition, but instead will have a useful development line. In thecase where the spin-on composition is not pH tuned, the resist materialmay “fall over” onto the spin-on composition after etching, whichobviously leads a defective resist material and/or to a defectivelayered material. It is in this instance where the pH tuned spin-oncomposition influences the mechanical and structural integrity of thefinal spin-on composition and the compatibility of the resistmaterial/ARC couple. As used herein, the terms “coupled” or “couple”mean that the two materials or compositions are juxtaposed on top of oneanother to the point where the two materials are physically,mechanically and/or chemically bonded to one another.

Examples of some suitable pH tuning agents comprise various molarconcentrations of the class of amines, such asγ-aminoalkyltrialkoxysilanes, specifically γ-aminopropyltriethoxysilanes(APTF or APTEOS); water; oxides and alkoxides, such as sodium alkoxides,potassium alkoxides, potassium hydroxide; hydrogen halides, such ashydrogen bromide, hydrochloric acid; acetic acid; sulfuric acid, lacticacid, nitric acid; TMAH; propylene glycol methyl ether acetate (PGMEA);amine-based oligomers, including those oligomers with inorganic atomssuch as silicon, and combinations thereof.

Contemplated molar concentrations of the pH tuning agent include pure,10 Molar, 1.0 Molar, 0.1 Molar and 0.01 Molar concentrations, dependingon the pH agent chosen for the resist material.

Contemplated resist materials may comprise any photolithographic resistmaterials, including those that have wavelength ranges around 157 nm,193 nm, 248 nm and 365 nm. The major reason that the class of resistmaterials is so broad is that the pH tuning agent makes it possible tomatch any photolithographic resist material with an anti-reflectivecoating and make them compatible with one another. Examples of somecontemplated photolithographic resist materials comprise acrylate-basedresist materials, epoxy-based chemically amplified resists,fluoropolymer resists (which are especially useful when contemplating a157 nm absorption wavelength), poly(norbornene-maleic anhydride)alternating co-polymers, polystyrene systems anddiazonaphthoquinone/novolac resists.

Methods of Production

According to another aspect of the present invention, methods forsynthesizing the absorbing spin-on compositions described herein areprovided. Spin-on materials are typically synthesized from a variety ofsilane reactants including, for example, triethoxysilane (HTEOS),tetraethoxysilane (TEOS), methyltriethoxysilane (MTEOS),dimethyldiethoxysilane, tetramethoxysilane (TMOS),methyltrimethoxysilane (MTMOS), trimethoxysilane,dimethyldimethoxysilane, phenyltriethoxysilane (PTEOS),phenyltrimethoxysilane (PTMOS), diphenyldiethoxysilane, anddiphenyldimethoxysilane. However, gallium, arsenic, germanium, boron andsimilar atoms and materials may also be used in conjunction with siliconatoms or as the sole atomic material to produce a spin-on material.

Halosilanes, including chlorosilanes, such as trichlorosilane,methyltrichlorosilane, ethyltrichlorosilane, phenyltrichlorosilane,tetrachlorosilane, dichlorosilane, methyldichlorosilane,dimethyldichlorosilane, chlorotriethoxysilane, chlorotrimethoxysilane,chloromethyltriethoxysilane, chloroethyltriethoxysilane,chlorophenyltriethoxysilane, chloromethyltrimethoxysilane,chloroethyltrimethoxysilane, and chlorophenyltrimethoxysilane are alsoused as silane reactants.

In general, to produce the absorbing spin-on compositions, the absorbingcompounds, such as absorbing compounds 1-41, or combinations thereof,are combined with the silane reactants during the synthesis of the SOGmaterials. The pH tuning agent may also be combined with the silanereactants during the synthesis of the SOG materials or once thesynthesis is complete.

One contemplated method of making an absorbing spin-on compositionincludes combining at least one inorganic-based composition, at leastone incorporatable organic absorbing compound, at least one pH tuningagent, an acid/water mixture, such as a nitric acid/water mixture, andat least one solvent to form a reaction mixture; and refluxing thereaction mixture to form the absorbing spin-on composition. The spin-oncomposition formed is then diluted with at least one solvent to providecoating solutions that produce films of various thicknesses. The pHtuning agent may also and alternatively be added during the refluxingstep or after the refluxing step.

In another contemplated method of making an absorbing spin-oncomposition, at least one inorganic-based composition, at least oneincorporatable organic absorbing compound, at least one pH tuning agent,and at least one solvent can be combined to foul' a reaction mixture.The reaction mixture is then refluxed to form the absorbing spin-oncomposition. The spin-on composition formed is diluted with at least onesolvent to provide coating solutions that produce films of variousthicknesses. The pH tuning agent in this method may either be avariation of the conventional acid/water mixture, in that a differentacid may be added, less acid may be added, or more water may be added.Regardless of the pH tuning agent chosen, however, the basic principalstill remains—which is that not only the pH is influenced by the pHtailing agent, but the chemical, mechanical and physical properties ofthe ARC are also influenced resulting in a more compatible resist/ARCcouple.

More specifically, a reaction mixture including silane reactants, forexample HTEOS, or TEOS and MTEOS, or, TMOS and MTMOS; or, alternatively,tetrachlorosilane and methyltrichlorosilane, at least one absorbingcompound, such as absorbing compounds 1-41; at least one pH tuningagent, such as APTF; a solvent or combination of solvents; and anacid/water mixture, is formed in a reaction vessel. Appropriate solventsinclude acetone, 2-propanol, and other simple alcohols, ketones andesters such as 1-propanol, MIBK, propoxypropanol, and propyl acetate.The acid/water mixture is, for example nitric acid and water. Otherprotic acids or acid anhydrides, such as acetic acid, formic acid,phosphoric acid, hydrochloric acid or acetic anhydride are alternativelyused in the acid mixture. The resulting mixture is refluxed for betweenapproximately 1 and 24 hours to produce the absorbing spin-on solution.As mentioned earlier, the pH tuning agent may be added during or afterthe refluxing step, depending on the resist material chosen. Also, asmentioned earlier, the acid concentration and/or strength and the waterconcentration in the acid/water mixture may be varied in order to becomea pH tuning agent, depending on the resist material chosen for thespecific layered material, electronic component or semiconductorcomponent application.

The absorbing spin-on material can be diluted with appropriate solventsto achieve coating solutions that produce films of various thicknesses.Suitable dilutant solvents include acetone, 2-propanol, ethanol,butanol, methanol, propylacetate, ethyl lactate, and propylene glycolpropyl ether, referred to commercially as Propasol-P. Dilutant solventswith high boiling points such as ethyl lactate and propylene glycolpropyl ether have been found beneficial. It is believed high boilingpoint solvents decrease the probability of formation of bubble filmdefects. In contrast, lower boiling point solvents may become entrappedbelow a crosslinked top layer of a film and subsequently produce voidswhen driven off during a baking process step. Additional solvents usefulin the invention include ethylene glycol dimethyl ether, alternativelytermed glyme, anisole, dibutyl ether, dipropyl ether, propylene glycolmethyl ether acetate, and pentanol. Optionally, surfactants, such as theproduct FC430, provided by 3M (Minneapolis, Minn.), or the productMegaface R08, provided by DIC (Japan), are also added to the coatingsolution. The coating solution is typically between about 0.5 and 20%polymer by weight. Prior to use, the coating solution is filtered bystandard filtration techniques.

According to a second method of forming absorbing spin-on materials, areaction mixture including at least one silane reactant, at least oneabsorbing compound, such as absorbing compounds 1-41, at least one pHtuning agent, and a solvent or combination of solvents is formed in areaction vessel. The reaction mixture is heated to reflux and refluxedfor between approximately 1 and 24 hours. The silane reactants andsolvents are as described in the first method above. An acid/watermixture, as described above, is added to the reaction mixture whilestirring. The resulting mixture is heated to reflux and refluxed forbetween approximately 1 and 24 hours to produce the absorbing and pHtuned spin-on material. The absorbing spin-on material is diluted andfiltered as described above to form a coating solution. Again, asmentioned earlier, the pH tuning agent may be added during or after thefirst refluxing step.

A method of forming an absorbing organohydridosiloxane material includesforming a mixture of a dual phase solvent which includes both anon-polar solvent and a polar solvent and a phase transfer catalyst;adding at least one organotrihalosilane, hydridotrihalosilane; adding atleast one pH tuning agent; and at least one absorbing compound, such asabsorbing compounds 1-41, to provide a dual phase reaction mixture; andreacting the dual phase reaction mixture for between 1 and 24 hours toproduce the absorbing organohydridosiloxane polymer. The phase transfercatalyst includes but is not limited to tetrabutylammonium chloride andbenzyltrimethylammonium chloride. Exemplary non-polar solvents include,but are not limited to, pentane, hexane, heptane, cyclohexane, benzene,toluene, xylene, halogenated solvents such as carbon tetrachloride andmixtures thereof. Useful polar solvents include water, alcohols, andalcohol and water mixtures. The absorbing polymer solution is dilutedand filtered as described above to form a coating solution.

Applications The absorbing and pH tuned spin-on coating solutions areapplied to various substrates to form layered materials, layers used insemiconductor processing, or layers used in electronic components,depending on the specific fabrication process, typically by conventionalspin-on deposition techniques. These techniques include a dispense spin,a thickness spin, and thermal bake steps, to produce an absorbing SOGanti-reflective coating. Typical processes include a thickness spin ofbetween 1000 and 4000 rpm for about 20 seconds and two or three bakesteps at temperatures between 80° C. and 300° C. for about one minuteeach. The absorbing and pH tuned spin-on anti-reflective coatings,according to the present invention exhibit refractive indices betweenabout 1.3 and about 2.0 and extinction coefficients greater thanapproximately 0.07.

Substrates contemplated herein may comprise any desirable substantiallysolid material. Particularly desirable substrate layers would comprisefilms; glass, ceramic, plastic, metal or coated metal, or compositematerial. In preferred embodiments, the substrate comprises a silicon orgermanium arsenide die or wafer surface, a packaging surface such asfound in a copper, silver, nickel or gold plated leadframe, a coppersurface such as found in a circuit board or package interconnect trace,a via-wall or stiffener interface (“copper” includes considerations ofbare copper and it's oxides), a polymer-based packaging or boardinterface such as found in a polyimide-based flex package, lead or othermetal alloy solder ball surface, glass and polymers such as polymimide.In more preferred embodiments, the substrate comprises a material commonin the packaging and circuit board industries such as silicon, copper,glass, and another polymer.

A general method of using an absorbing spin-on-glass material accordingto the present invention as an anti-reflective coating in aphotolithographic process is illustrated in FIGS. 2 a-2 h. As shown inFIG. 2 a, a dielectric layer 22 is deposited on a silicon substrate 20.Dielectric layer 22 can be composed of a variety of dielectric materialsincluding, for example, a silicon dioxide layer derived from TEOS, asilane based silicon dioxide layer, a thermally grown oxide, or achemical-vapor-deposition-produced methylhydridosiloxane or silicondioxide incorporating other elements or compounds. Dielectric layer 22is typically an optically transparent medium, but it does not have to bean optically transparent medium. An absorbing and pH tuned spin-onanti-reflective coating layer 24 is applied above dielectric layer 22(FIG. 2 b) that is covered by a photoresist layer 26, of a conventionalpositive photoresist, to produce the stack shown in FIG. 2 c. The stackof FIG. 2 c is exposed to ultraviolet radiation 32 through mask 30, asshown in FIG. 2 d. During the exposure, the absorbing and pH tunedspin-on ARC layer 24 absorbs UV light 32 transmitted through thephotoresist. Because the dielectric layer 22 is generally and usuallytransparent in the UV wavelength range, if absorbing spin-on ARC layer24 were not present, the UV light 32 would reflect off the underlyingsilicon layer 20 degrading a critical dimension, for example criticaldimension 27 of the exposed photoresist. In this example, a positivephotoresist, which provides direct image transfer, is assumed. It shouldbe appreciated, however, that some organic dielectrics are not opticallytransparent.

The exposed stack is developed to produce the stack of FIG. 2 e. Theabsorbing and pH tuned spin-on ARC layer 24 is resistant to conventionalphotoresist developer solutions such as a 2.5% solution oftetramethylammoniumhydroxide (TMAH). In contrast, ARC layers, which havesome of the chemical characteristics of the photoresist materials, aremore sensitive to photoresist developers. Furthermore, it is anticipatedthat absorbing and pH tuned spin-on ARC layers are resistant tophotoresist stripping processes, whereas organic ARC'S are notresistant. Thus, use of absorbing and pH tuned spin-on layers mayfacilitate photoresist rework, without the need to reapply the ARClayer.

Next, a pattern is etched in the absorbing and tuned spin-on ARC layer24 through the opening in photoresist layer 26 to produce the etchedstack of FIG. 2 f. A fluorocarbon etch, which has a high selectivity tophotoresist, is used to etch the absorbing spin-on ARC layer 24. Theresponse of the absorbing spin-on layer to a fluorocarbon etch providesan additional advantage of the absorbing and pH turned spin-on layerover organic ARC layers, which require an oxygen plasma etch. An oxygenplasma etch can degrade the critical dimension of the developedphotoresist because the photoresist, being organic based, is also etchedby an oxygen plasma. A fluorocarbon plasma consumes less photoresistthan an oxygen plasma. At shorter UV wavelengths, depth of focusrequirements will limit the thickness of photoresist layer 26 at theexposure step shown in FIG. 2 d. For example, it is estimated that at193 nm, the thickness of photoresist layer should be approximately 300run. Thus, as these short wavelengths start to be employed, it will beimportant to have an ARC layer that can be etched selectively withrespect to the photoresist.

The fluorocarbon etch is continued through the dielectric layer 22 toproduce the stack of FIG. 2 g. Photoresist layer 26 is partiallyconsumed during the continued etch process. Finally, the photoresistlayer 26 is stripped using an oxygen plasma or a hydrogen reducingchemistry or via a wet chemistry and the spin-on ARC layer 24 isstripped using either a buffered oxide etch, for example a standardhydrofluoric acid/water mixture, non, partially or complete aqueousfluoride chemistry, or an aqueous or non-aqueous organoamine.Advantageously, the spin-on ARC layer can be stripped with solutionsthat show a good selectivity with respect to the underlying dielectriclayer. Thus, the general photolithographic method shown in FIGS. 2 a-2 hillustrates the process advantages of absorbing spin-on materials asanti-reflective coating layers and as sacrificial anti-reflectivecoating layers.

EXAMPLES

The methods of synthesizing the absorbing spin-on materials comprisingpH tuning agents in order to couple with and improve the compatibilityof a resist material are illustrated in the following examples. Thesolutions and coatings prepared in the following examples are tuned inorder to be compatible with several photoresist materials, includingthose that absorb around 157 nm, 193 nm, 248 nm, and 375 nm. An exampleof the 193 nm resist material is an acrylate resist material.

Example 1 Synthesis of an Absorbing Spin-On Material Containing9-anthracene carboxy-methyl triethoxysilane and a pH Tuning Agent

In a 22-liter flask 6331.20 grams 2-propanol, 3166.66 grams acetone,2633.78 grams TEOS, 1639.78 grams MTEOS, 958.97 grams 9-anthracenecarboxy-methyl triethoxysilane, 119.24 grams 0.1 M nitric acid and1425.58 grams deionized water were combined. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 932.80 grams ofbutanol and 20650.0 g of ethyl lactate was added. The solution wasfiltered to be used in the pH tuning experiments. A pH tuning agent, 0.1M nitric acid, was added to 2 separate solutions of 650 g of the spin-onmaterial that has a starting pH of about 1.5. The nitric acid was addedin the following amounts and gave the following pH: a) 2.794 g (pH=0.7);b) 0.293 g (pH=0.75). APTEOS was added to two additional and separatesolutions of 650 g of the same spin-on material in the following amountsgiving the following pH values: a) 0.053 g (pH=−4.13); b) 0.151 g(pH=5.47). The solutions were then dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1402.17 A. At 248nm, the refractive index (n) was 1.47 and the extinction coefficient (k)was 0.429. The same spin and bake process parameters and measurementtechnique was used in all of the following examples.

Synthesis of Another Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M nitric acid and 72 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 A. At 248nm, the refractive index (n) was 1.373 and the extinction coefficient(k) was 0.268. It should be appreciated, however, that the refractiveindex and extinction coefficient data for this example and all of thefollowing and contemplated examples could change depending on the purityof the initial reactants and starting compounds. The same spin and bakeprocess parameters and measurement technique was used in all of thefollowing examples.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.01 M nitric acid and 72 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 A. At 248nm, the refractive index (n) was 1.373 and the extinction coefficient(k) was 0.268.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 1.0 M nitric acid and 72 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 Å.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M nitric acid and 100 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 Å.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M nitric acid and 130 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 Å.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M nitric acid and 77 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. 1 g of APTEOS was added to the solution during refluxing. Afterrefluxing, to the solution, 115 grams of butanol, 488 grams 2-propanol,245 grams of acetone, 329 grams of ethanol, 53 grams deionized water and3.8 grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. Thesolution was filtered. The solution was dispensed, followed by a 3000rpm thickness spin for 20 seconds, and baked at 80° C. and at 180° C.for one minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer. The film thickness was 1635 Å. At 248nm, the refractive index (n) was 1.373 and the extinction coefficient(k) was 0.268.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl triethoxysilane and pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M nitric acid and 77 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. 1 g of APTEOS was added to the solution after refluxing. Alsoafter refluxing, to the solution, 115 grams of butanol, 488 grams2-propanol, 245 grams of acetone, 329 grams of ethanol, 53 gramsdeionized water and 3.8 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added. The solution was filtered. The solution was dispensed,followed by a 3000 rpm thickness spin for 20 seconds, and baked at 80°C. and at 180° C. for one minute each. Optical properties were measuredwith an N & K Technology Model 1200 analyzer. The film thickness was1635 Å.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 10 M acetic acid and 72 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 115 grams of butanol, 488 grams 2-propanol, 245 gramsof acetone, 329 grams of ethanol, 53 grams deionized water and 3.8 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 Analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 1.0 M acetic acid and 72 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 5 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams pure acetic acid and 72 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 115 grams of butanol, 488 grams 2-propanol, 245 gramsof acetone, 329 grams of ethanol, 53 grams deionized water and 3.8 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 10 M acetic acid and 100 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 1.0 M acetic acid and 130 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 115 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams pure acetic acid and 72 grams deionized waterwere combined. 1.0 g of potassium hydroxide was added before refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,115 grams of butanol, 488 grams 2-propanol, 245 grams of acetone, 329grams of ethanol, 53 grams deionized water and 3.8 grams of 10% FC 430(3M, Minneapolis, Minn.) were added. The solution was filtered. Thesolution was dispensed, followed by a 3000 rpm thickness spin for 20seconds, and baked at 80° C. and at 180° C. for one minute each. Opticalproperties were measured with an N & K Technology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 10 M acetic acid and 72 grams deionized waterwere combined. 1.0 g of potassium hydroxide was added during refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,115 grams of butanol, 488 grams 2-propanol, 245 grams of acetone, 329grams of ethanol, 53 grams deionized water and 3.8 grams of 10% FC 430(3M, Minneapolis, Minn.) were added. The solution was filtered. Thesolution was dispensed, followed by a 3000 rpm thickness spin for 20seconds, and baked at 80° C. and at 180° C. for one minute each. Opticalproperties were measured with an N & K Technology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 1.0 M acetic acid and 72 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. 1.0 g of potassium hydroxide was added before refluxing. Also, tothe solution, 115 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams pure lactic acid and 40 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 26 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer. Thickness is 1487.1 Angstroms; k=0.4315; n=1.4986.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 40 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 26 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams pure lactic acid and 40 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 26 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 1.0 M lactic acid and 70 grams deionizedwater were combined. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 26 grams of butanol, 488 grams 2-propanol, 245grams of acetone, 329 grams of ethanol, 53 grams deionized water and 3.8grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. The solutionwas filtered. The solution was dispensed, followed by a 3000 rpmthickness spin for 20 seconds, and baked at 80° C. and at 180° C. forone minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 90 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 26 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 40 grams deionized waterwere combined. 1.5 g of TMAH was added to the solution before refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,26 grams of butanol, 488 grams 2-propanol, 245 grams of acetone, 329grams of ethanol, 53 grams deionized water and 3.8 grams of 10% FC 430(3M, Minneapolis, Minn.) were added. The solution was filtered. Thesolution was dispensed, followed by a 3000 rpm thickness spin for 20seconds, and baked at 80° C. and at 180° C. for one minute each. Opticalproperties were measured with an N & K Technology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 40 grams deionized waterwere combined. 1.5 g of TMAH was added to the solution during refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,26 grams of butanol, 488 grams 2-propanol, 245 grams of acetone, 329grams of ethanol, 53 grams deionized water and 3.8 grams of 10% FC 430(3M, Minneapolis, Minn.) were added. The solution was filtered. Thesolution was dispensed, followed by a 3000 rpm thickness spin for 20seconds, and baked at 80° C. and at 180° C. for one minute each. Opticalproperties were measured with an N & K Technology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 40 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.1.5 g of TMAH was added to the solution after refluxing. Also afterrefluxing, to the solution, 26 grams of butanol, 488 grams 2-propanol,245 grams of acetone, 329 grams of ethanol, 53 grams deionized water and3.8 grams of 10% FC 430 (3M, Minneapolis, Minn.) were added. Thesolution was filtered. The solution was dispensed, followed by a 3000rpm thickness spin for 20 seconds, and baked at 80° C. and at 180° C.for one minute each. Optical properties were measured with an N & KTechnology Model 1200 analyzer.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 178 grams 2-propanol, 89 grams acetone, 52 gramsTEOS, 59 grams MTEOS, 29 grams 9-anthracene carboxy-propyltriethoxysilane, 3.3 grams 10 M lactic acid and 40 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 26 grams of butanol, 488 grams 2-propanol, 245 grams ofacetone, 329 grams of ethanol, 53 grams deionized water and 3.8 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. The solution wasfiltered. The solution was dispensed, followed by a 3000 rpm thicknessspin for 20 seconds, and baked at 80° C. and at 180° C. for one minuteeach. Optical properties were measured with an N & K Technology Model1200 analyzer. Thickness is 1487.1 Angstroms; k=0.4315; n=1.4986.

Example 2 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.1 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 111 grams of butanol, 459 grams 2-propanol, 230 grams ofacetone, 309 grams of ethanol, 50 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added. Thickness=1436 Å,n=1.479, k=0.1255.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.01 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 111 grams of butanol, 459 grams 2-propanol, 230 grams ofacetone, 309 grams of ethanol, 50 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilyprOpoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 1.0 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 111 grams of butanol, 459 grams 2-propanol, 230 grams ofacetone, 309 grams of ethanol, 50 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.1 M nitric acid and 95 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 111 grams of butanol, 459 grams 2-propanol, 230 grams ofacetone, 309 grams of ethanol, 50 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.1 M nitric acid and 110 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 111 grams of butanol, 459 grams 2-propanol, 230 grams ofacetone, 309 grams of ethanol, 50 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.1 M nitric acid and 72 grams deionized water werecombined. 1.2 g of APTEOS was added to the solution before refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,111 grams of butanol, 459 grams 2-propanol, 230 grams of acetone, 309grams of ethanol, 50 grams deionized water and 3.75 grams of 10% FC 430(3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.6 grams 0.1 M nitric acid and 72 grams deionized water werecombined. 1.2 g of APTEOS was added to the solution during refluxing.The flask was refluxed and/or heated for 1 to 12 hours. To the solution,111 grams of butanol, 459 grams 2-propanol, 230 grams of acetone, 309grams of ethanol, 50 grams deionized water and 3.75 grams of 10% FC 430(3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid, and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 25 grams 9-anthracene methanol, 10 grams2-hydroxy-4-(3 triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, Q.6 grams 0.1 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. 1.2 gof APTEOS was added to the solution after refluxing. Also, afterrefluxing, to the solution, 111 grams of butanol, 459 grams 2-propanol,230 grams of acetone, 309 grams of ethanol, 50 grams deionized water and3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.) were added.

Example 3 Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 10 M acetic acid and 71.90 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 gram's 1.0 M acetic acid and 71.90 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams pure acetic acid and 71.90 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 10 M acetic acid and 95 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) 5 were added.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 10 M acetic acid and 120 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 10 M acetic acid and 71.90 grams deionized water werecombined. 2.2 g of potassium hydroxide was added to the solution beforerefluxing. The flask was refluxed and/or heated for 1 to 12 hours. Tothe solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 10 M acetic acid and 71.90 grams deionized water werecombined. 2.2 g of potassium hydroxide was added to the solution duringrefluxing. The flask was refluxed and/or heated for 1 to 12 hours. Tothe solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 93 gramsTEOS, 77 grams MTEOS, 20 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 1075 M acetic acid and 71.90 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.2.2 g of potassium hydroxide was added to the solution after refluxing.Also, after refluxing, to the solution, 57 grams of butanol, 88 grams2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Example 4 Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529,k=0.124.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.01 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529,k=0.124.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3 triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 1.0 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529,k=0.124.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 95 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529,k=0.124.

Synthesis of Absorbing SOG Containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 125 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. To thesolution, 57 grams of butanol, 88 grams 2-propanol, 44 grams of acetone,59 grams of ethanol, 9.5 grams deionized water and 3.75 grams of 10% FC430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529,k=0.124.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 72 grams deionized water werecombined. 3 g of APTEOS was added to the solution before refluxing. Theflask was refluxed and/or heated for 1 to 12 hours. To the solution, 57grams of butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529, k=0.124.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 72 grams deionized water werecombined. 3 g of APTEOS was added to the solution during refluxing, Theflask was refluxed and/or heated for 1 to 12 hours. To the solution, 57grams of butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added. Thickness=4275 Å, n=1.529, k=0.124.

Synthesis of absorbing SOG containing 9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid, andpH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 108 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 60 grams2-hydroxy-4-(3 triethoxysilypropoxy)-diphenylketone, 5 grams rosolicacid, 0.5599 grams 0.1 M nitric acid and 72 grams deionized water werecombined. The flask was refluxed and/or heated for 1 to 12 hours. 3 g ofAPTEOS was added to the solution after refluxing. Also, after refluxing,to the solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added. Thickness=4275 Å,n=1.529, k=0.124.

Example 5 Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added. Thickness=3592 Å, n=1.563, k=0.067.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.01 Mnitric acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

5 Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 1.0 Mnitric acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 90 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 125 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

10 Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 72 grams deionized water were combined. 0.26 g of APTEOSwas added to the solution before refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 72 grams deionized water were combined. 0.26 g of APTEOSwas added to the solution during the refluxing step. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 0.6 grams 0.1 Mnitric acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. 0.26 g of APTEOS was added tothe solution after refluxing. Also, after refluxing, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis;Minn.) were added to the solution.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 1.0 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 1.0 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 75 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 115 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. 0.06 g of APTEOSwas added to the solution before refluxing. The flask was refluxedand/or heated for 1 to 12 hours.

To the solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. 0.06 g of APTEOSwas added to the solution during refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone and a pH TuningAgent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51 grams MTEOS, 60 grams2-hydroxy-4-(3-trimethoxysilypropoxy)-diphenylketone, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. 0.06 g of APTEOS was added tothe solution after refluxing. After refluxing, 57 grams of butanol, 88grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were also added to the solution.

Example 6 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 72 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. To the solution, 57 gramsof butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.01 Mhydrochloric acid and 72 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. To the solution, 57 gramsof butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 1.0 Mhydrochloric acid and 72 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. To the solution, 57 gramsof butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 100 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. To the solution, 57 gramsof butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 130 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours.

To the solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 72 grams deionized water were combined. 1.2 g ofpotassium hydroxide was added to the solution before refluxing. Theflask was refluxed and/or heated for 1 to 12 hours. To the solution, 57grams of butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 72 grams deionized water were combined. 1.2 g ofpotassium hydroxide was added to the solution during refluxing. Theflask was refluxed and/or heated for 1 to 12 hours. To the solution, 57grams of butanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams ofethanol, 9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M,Minneapolis, Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene methanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 10 grams 9-anthracene methanol, 0.6 grams 0.1 Mhydrochloric acid and 72 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. 1.2 g of potassiumhydroxide was added to the solution after refluxing. Also afterrefluxing, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.75 gramsof 10% FC 430 (3M, Minneapolis, Minn.) were added to the solution.

Example 7 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 1.0 Macetic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added. Thickness=3503 Å, n=1.475, k=0.193.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams pure Macetic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 98 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 120 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 72 grams deionized water were combined. 1.5 g of TMAHwas added to the solution before refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 72 grams deionized water were combined. 1.5 g of TMAHwas added to the solution during refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Macetic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. 1.5 g of TMAH was added to thesolution after refluxing. Also after refluxing, 57 grams of butanol, 88grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added to the solution.

Example 8 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid and apH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added. Thickness=3119 Å, n=1.454, k=0.175.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 1.0 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams purelactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 100 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenyllcetone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 130 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. 0.1 g of APTEOSwas added to the solution before refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. 0.1 g of APTEOSwas added to the solution during refluxing. The flask was refluxedand/or heated for 1 to 12 hours. To the solution, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenemethanol, 2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolicacid and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 0.6 grams 10 Mlactic acid and 72 grams deionized water were combined. The flask wasrefluxed and/or heated for 1 to 12 hours. 0.1 g of APTEOS was added tothe solution after refluxing. Also after refluxing, 57 grams of butanol,88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added to the solution.

Example 9 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid,quinizarin, alizarin and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 20 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-anthracene methanol, and 5 grams of rosolic acid, 2 grams ofquinizarin, 2 grams alizarin, 0.6 grams 0.1 M nitric acid, 1.0 M nitricacid and 0.01 M nitric acid (added to three separate mixtures) and 72grams deionized water were combined. In two other solutions containing0.1 M nitric acid, 90 g and 110 g of deionized water were added,respectively. The flask was refluxed and/or heated for 1 to 12 hours. Tothe solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.7 grams of10% FC 430 (3M, Minneapolis, Minn.) were added. Thickness=3554 Å,n=1.489, k=0.193.

In three additional solutions, 1.1 g of potassium hydroxide was added.In each solution, the potassium hydroxide was added before, during andafter the refluxing step, respectively.

Example 10 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol,2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, rosolic acid,alizarin and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 51.5 grams MTEOS, 5 grams2-hydroxy-4-(3-triethoxysilypropoxy)-diphenylketone, 25 grams of9-drithracene methanol, 5 grams of rosolic acid, and 2 grams alizarin,0.5599 grams 1.0 M, 10 M and pure acetic acid (added to three separatemixtures, respectively) and 71.90 grams deionized water were combined.In two other solutions containing 10 M acetic acid, 90 g and 110 g ofdeionized water were added, respectively. The flask was refluxed and/orheated for 1 to 12 hours. To the solution, 56.68 grams of butanol, 87.99grams 2-propanol, 44.10 grams of acetone, 59.31 grams of ethanol, 9.55grams deionized water and 3.75 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 0.25 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Example 11 Synthesis of Absorbing Spin-On Material Containing9-anthracene carboxy-methyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 0.25 g of HCl was added. In eachsolution, the HCl was added before, during and after the refluxing step,respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 1.2 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-propyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 0.2 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-pentyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-pentyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 1.0 g of potassium hydroxide was added.In each solution, the potassium hydroxide was added before, during andafter the refluxing step, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl trimethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-methyltrimethoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 2.4 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl trimethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-ethyltrimethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 1.2 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl trimethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, 30 grams 9-anthracene carboxy-propyltrimethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M hydrochloric acid(added to three separate solutions, respectively) and 72 grams deionizedwater were combined. In two other solutions containing 0.1 Mhydrochloric acid, 90 g and 110 g of deionized water were added,respectively. The flask was refluxed and/or heated for 1 to 12 hours. Tothe solution, 57 grams of butanol, 88 grams 2-propanol, 44 grams ofacetone, 59 grams of ethanol, 9.5 grams deionized water and 3.7 grams of10% FC 430 (3M, Minneapolis, Minn.) were added.

In three additional solutions, 1.4 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Example 12 Synthesis of Absorbing Spin-On Material Containing9-anthracene methanol and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, and 10 grams 9-anthracene methanol are combined.The solution is refluxed for 6 hours. A mixture of 0.6 grams 0.1 M, 0.01M and 1.0 M hydrochloric acid (added to three separate solutions,respectively) and 72 grams deionized water were combined. In two othersolutions containing 0.1 M hydrochloric acid, 90 g and 110 g ofdeionized water were added, respectively. The flask was refluxed and/orheated for 1 to 12 hours. To the solution, 57 grams of butanol, 88 grams2-propanol, 44 grams of acetone, 59 grams of ethanol, 9.5 gramsdeionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis, Minn.)were added.

In three additional solutions, 1.4 g of APTEOS was added. In eachsolution, the 15 APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene ethanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, and 10 grams 9-anthracene ethanol are combined.The solution is refluxed for 6 hours.

A mixture of 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams ofbutanol, 88 grams 2-propanol, 44 grams of acetone, 59 grams of ethanol,9.5 grams deionized water and 3.7 grams of 10% FC 430 (3M, Minneapolis,Minn.) were added.

In three additional solutions, 0.4 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracene propanoland a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 123 gramsTEOS, 77 grams MTEOS, and 10 grams 9-anthracene propanol are combined.The solution is refluxed for 6 hours. A mixture of 0.6 grams 1.0 M, 10 Mand pure acetic acid (added to three separate solutions, respectively)and 72 grams deionized water were combined. In two other solutionscontaining 10 M acetic acid, 90 g and 110 g of deionized water wereadded, respectively. The flask was refluxed and/or heated for 1 to 12hours. To the solution, 57 grams of butanol, 88 grams 2-propanol, 44grams of acetone, 59 grams of ethanol, 9.5 grams deionized water and 3.7grams of 10% FC 430 (3M, Minneapolis, Minn.) were added.

In three additional solutions, 1.25 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Example 13 Synthesis of Absorbing Spin-On Material Containing9-anthracene carboxy-methyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-methyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 1.25 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-ethyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 0.25 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl trimethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-methyltrimethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 1.5 g of potassium hydroxide was added.In each solution, the potassium hydroxide was added before, during andafter the refluxing step, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-propyl triethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-propyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 0.5 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-methyl tripropoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-methyltripropoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 0.75 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing 9-anthracenecarboxy-ethyl tributoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams 2-propanol, 148 grams acetone, 90 gramsTMOS, 59 grams MTMOS, 60 grams 9-anthracene carboxy-ethyltributoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask isrefluxed and/or heated for 1 to 12 hours. To the solution, 115 grams ofbutanol, 488 grams 2-propanol, 245 grams of acetone, 329 grams ofethanol, 53 grams deionized water and 3.8 grams of 10% FC 430 (3M,Minneapolis, Minn.) are added.

In three additional solutions, 1.00 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Example 14 Synthesis of Absorbing Spin-On Material Containingphenyltriethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 104 grams (0.432 moles)phenyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (addedto three separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of Butanol, 88 grams (1.422 moles) 2-propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added. Thickness=1727 Å, n=1.957,k=0.384.

In three additional solutions, 1.00 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containingphenyltrimethoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 104 grams (0.432 moles)phenyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid(added to three separate solutions, respectively) and 72 grams deionizedwater were combined. In two other solutions containing 0.1 M nitricacid, 90 g and 110 g of deionized water were added, respectively. Theflask was refluxed and/or heated for 1 to 12 hours. To the solution, 57grams (0.769 moles) of Butanol, 88 grams (1.422 moles) 2-propanol, 44grams (0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5grams (0.528 moles) deionized water were added.

In three additional solutions, 1.00 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containingphenyltripropoxysilane and a pH Tuning Agent

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 104 grams (0.432 moles)phenyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (addedto three separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of Butanol, 88 grams (1.422 moles) 2-propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added.

In three additional solutions, 0.75 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing phenyltributoxysilaneand a pH Tuning Agent

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 104 grams (0.432 moles)phenyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (addedto three separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of Butanol, 88 grams (1.422 moles) 2-propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added.

In three additional solutions, 0.50 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Example 15 Synthesis of Absorbing Spin-On Material Containing4-ethoxyphenylazobenzene-4-carboxy-methyl triethoxysilane and a pHTuning Agent

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 77 grams (0.432 moles)MTEOS, 44.5 grams (0.13 moles) 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure acetic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M acetic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of butanol, 88 grams (1.422 moles) 2-propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added.

In three additional solutions, 0.50 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing4-ethoxyphenylazobenzene-4-carboxy-ethyl triethoxysilane

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 77 grams (0.432 moles)MTEOS, 44.5 grams (0.13 moles) 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane, 0.6 grams 1.0 M, 10 M and pure lactic acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 10 M lactic acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of butanol, 88 grams (1.422 moles) 2-propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added.

In three additional solutions, 0.25 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing4-methoxyphenylazobenzene-4-carboxy-propyl triethoxysilane

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 77 grams (0.432 moles)MTEOS, 44.5 grams (0.13 moles) 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M nitric acid (added tothree separate solutions, respectively) and 72 grams deionized waterwere combined. In two other solutions containing 0.1 M nitric acid, 90 gand 110 g of deionized water were added, respectively. The flask wasrefluxed and/or heated for 1 to 12 hours. To the solution, 57 grams(0.769 moles) of butanol, 88 grams (1.422 moles) 2 propanol, 44 grams(0.758 moles) of acetone, 59 grams (1.227 moles) of ethanol, 9.5 grams(0.528 moles) deionized water were added.

In three additional solutions, 0.10 g of APTEOS was added. In eachsolution, the APTEOS was added before, during and after the refluxingstep, respectively.

Synthesis of Absorbing Spin-On Material Containing4-methoxyphenylazobenzene-4-carboxy-propyl trimethoxysilane

In a 1-liter flask 297 grams (4.798 moles) 2-propanol, 148 grams (2.558moles) acetone, 123 grams (0.593 moles) TEOS, 77 grams (0.432 moles)MTEOS, 44.5 grams (0.13 moles) 4-ethoxyphenylazobenzene-4-carboxy-methyltriethoxysilane, 0.6 grams 0.1 M, 0.01 M and 1.0 M hydrochloric acid(added to three separate solutions, respectively) and 72 grams deionizedwater were combined. In two other solutions containing 0.1 Mhydrochloric acid, 90 g and 110 g of deionized water were added,respectively. The flask was refluxed and/or heated for 1 to 12 hours. Tothe solution, 57 grams (0.769 moles) of butanol, 88 grams (1.422 moles)2-propanol, 44 grams (0.758 moles) of acetone, 59 grams (1.227 moles) ofethanol, 9.5 grams (0.528 moles) deionized water were added. n=1.499,k=0.162 at 365 nm.

In three additional solutions, 0.50 g of TMAH was added. In eachsolution, the TMAH was added before, during and after the refluxingstep, respectively.

Example 16 Synthesis of an Absorbing Spin-On Material Containing PGMEAand a pH Tuning Agent

In a 1-liter flask, 504.829 g of PGMEA, 123.6 grams TEOS, 76.9 gramsMTEOS, 5.608 grams 0.1 M nitric acid and 66.869 grams deionized waterwere combined. The flask was refluxed and/or heated for 1 to 12 hours.To the solution, 43.777 grams of butanol was added. The solution wasfiltered to be used in the pH tuning experiments.

In another 1-liter flask, 297 grams 2-propanol, 148.560 grams acetone,139.902 grams TEOS, 19.10 grams MTEOS, 51.7 g PTEOS, 5.624 grams 0.1 Mnitric acid and 66.827 grams deionized water were combined. The flaskwas refluxed and/or heated for 1 to 12 hours. To the solution, 43.93grams of butanol was added. The solution was filtered to be used in thepH tuning experiments.

The two solutions prepared were combined, and a pH Tuning Agent, APTEOS,was added to 6 separate solutions of 650 g of the combined spin-onmaterial that has a starting pH of about 1.7. The APTEOS was added inthe following amounts and gave the following pH: a) 1.49 g (pH=8.07); b)0.26 g (pH=7.12); c) 0.1 g (pH=6.29); d) 0.06 (pH=5.50); e) 0.03 g(pH=2.49); f) 0 grams (pH=1.76). The solutions were then dispensed,followed by a 3000 rpm thickness spin for 20 seconds, and baked at 80°C. and at 180° C. for one minute each. Optical properties were measuredwith an N & K Technology Model 1200 analyzer. Optical properties followfor each of the A-F solutions shown above:

a) Thickness=1686 Angstroms; k=0.297; n=1.802; etch ratio(er)=9.33

b) Thickness=1332 Angstroms; k=0.295; n=1.802; etch ratio(er)=8.5 5

c) Thickness=1298 Angstroms; k=0.294; n=1.802; etch ratio(er)=8.316

d) Thickness=1292 Angstroms; k=0.293; n=1.802; etch ratio(er)=8.17

e) Thickness=1304.9 Angstroms; k=0.292; n=1.802; etch ratio(er)=8.01

f) Thickness=1263.9 Angstroms; k=0.289; n=1.802; etch ratio(er)=7.83

Thus, specific embodiments and applications of compositions and methodsto produce spin-on materials, spin-on inorganic materials and spin-onglass materials comprising absorbing compounds and that comprise a pHtuning agent have been disclosed. It should be apparent, however, tothose skilled in the art that many more modifications besides thosealready described are possible without departing from the inventiveconcepts herein. The inventive subject matter, therefore, is not to berestricted except in the spirit of the appended claims. Moreover, ininterpreting both the specification and the claims, all terms should beinterpreted in the broadest possible manner consistent with the context.In particular, the terms “comprises” and “comprising” should beinterpreted as referring to elements, components, or steps in anon-exclusive manner, indicating that the referenced elements,components, or steps may be present, or utilized, or combined with otherelements, components, or steps that are not expressly referenced.

1. A method of making a spin-on composition comprising: combining atleast one silane reactant, at least one incorporatable organic absorbingcompound, an acid/water mixture, and one or more solvents to form areaction mixture; heating the reaction mixture to form the spin-oncomposition; and adding at least one of the following to the spin-oncomposition: an γ-aminoalkyltrialkoxysilane, an oxide, an alkoxide, ahydrogen halide, propylene glycol methyl ether acetate,tetramethylammonium hydroxide, an amine-based oligomer and combinationsthereof.
 2. The method of claim 1, wherein the at least one organicabsorbing compound comprises at least one benzene ring and a reactivegroup comprising hydroxyl groups, amine groups, carboxylic acid groups,and substituted silyl groups with silicon bonded to at least onesubstituent comprising alkoxy groups and halogen atoms.
 3. The method ofclaim 1, wherein the at least one organic absorbing compound comprisesan absorbing compound selected from the group consisting of anthraflavicacid, 9-anthracene carboxylic acid, 9-anthracene methanol, alizarin,quinizarin, primuline,2-hydroxy-4(3-triethoxysilylpropoxy)-diphenylketone, rosolic acid,triethoxysilylpropyl-1,8-naphthalimide, 9-anthracene carboxy-alkyltriethoxysilane, phenyltriethoxysilane, 10-phenanthrene carboxy-methyltriethoxysilane, 4-phenylazophenol,4-ethoxyphenylazobenzene-4-carboxy-methyl triethoxysilane,4-methoxyphenylazobenzene-4-carboxy-methyl triethoxysilane, and mixturesthereof.
 4. The method of claim 1, wherein the at least one silanereactants comprises triethoxysilane, tetraethoxysilane,methyltriethoxysilane, dimethyldiethoxysilane, tetramethoxysilane,methyltrimethoxysilane, trimethoxysilane, dimethyldimethoxysilane,phenyltriethoxysilane, phenyltrimethoxysilane, diphenyldiethoxysilane,and diphenyldimethoxysilane, trichlorosilane, methyltrichlorosilane,ethyltrichlorosilane, phenyltrichlorosilane, tetrachlorosilane,chlorotriethoxysilane, chlorotrimethoxysilane,chloromethyltriethoxysilane, chloroethyltriethoxysilane,chlorophenyltriethoxysilane, chloromethyltrimethoxysilane,chloroethyltrimethoxysilane, and chlorophenyltrimethoxysilane.
 5. Themethod of claim 1, wherein-water is also added to the spin-oncomposition after the step of heating the reaction mixture to form thespin-on composition.
 6. The method of claim 1, wherein the acid/watermixture comprises nitric acid, lactic acid, or acetic acid.
 7. A methodof making a coating solution containing a spin-on material comprising:combining at least one alkoxysilane or halosilane; at least oneincorporatable organic absorbing compounds; an acid/water mixture, andone or more solvents to form a reaction mixture; heating the reactionmixture to form the spin-on material; and adding at least one of thefollowing to the spin-on composition: an γ-aminoalkyltrialkoxysilane, anoxide, an alkoxide, a hydrogen halide, propylene glycol methyl etheracetate, tetramethylammonium hydroxide, an amine-based oligomer andcombinations thereof.
 8. The method of claim 7, further comprisingadding one or more dilutant solvents to the spin-on material to producea coating solution.